Carbon-doped GeTe Phase-Change Memory featuring remarkable RESET current reduction.
| Autor: | Beneventi, G.B., Perniola, L., Fantini, A., Blachier, D., Toffoli, A., Gourvest, E., Maitrejean, S., Sousa, V., Jahan, C., Nodin, J.F., Persico, A., Loubriat, S., Roule, A., Lhostis, S., Feldis, H., Reimbold, G., Billon, T., De Salvo, B., Larcher, L., Pavan, P. |
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| Zdroj: | 2010 Proceedings of the European Solid-State Device Research Conference (ESSDERC); 2010, p313-316, 4p |
| Databáze: | Complementary Index |
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