Carrier transport characteristics of strained N-MOSFET featuring channel proximate silicon-carbon source/drain stressors for performance boost.
| Autor: | Shao-Ming Koh, Peng Zhang, Shu-Feng Ren, Chee-Mang Ng, Samudra, G.S., Yee-Chia Yeo |
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| Zdroj: | 2010 Proceedings of the European Solid-State Device Research Conference (ESSDERC); 2010, p412-415, 4p |
| Databáze: | Complementary Index |
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