Dependable SRAM with enhanced read-/write-margins by fine-grained assist bias control for low-voltage operation.

Autor: Nii, K., Yabuuchi, M., Fujiwara, H., Nakano, H., Ishihara, K., Kawai, H., Arimoto, K.
Zdroj: 2010 IEEE International SOC Conference (SOCC); 2010, p519-524, 6p
Databáze: Complementary Index