Impact of additional LDD rapid thermal annealing on submicron n-MOSFETs.

Autor: Qian Wensheng, Leong, V.K.W., Wang Yuwen, Li Yisuo, Pandey Shesh Mani, Manju, S., Benistant, F., Chu, S.
Zdroj: Advanced Semiconductor Manufacturing Conference & Workshop, 2003 IEEEI/SEMI; 2003, p234-237, 4p
Databáze: Complementary Index