Gate oxide damage and charging characterization in a 0.13 μm, triple oxide (1.7/2.2/5.2nm) bulk technology.
| Autor: | Hook, T.B., Harmon, D., Wing Lai |
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| Zdroj: | 7th International Symposium on Plasma & Process-Induced Damage; 2002, p10-13, 4p |
| Databáze: | Complementary Index |
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