Highly scalable Z-RAM with remarkably long data retention for DRAM application.

Autor: Tae-Su Jang, Joong-Sik Kim, Sang-Min Hwang, Young-Hoon Oh, Kwang-Myung Rho, Seoung-Ju Chung, Su-Ock Chung, Jae-Geun Oh, Bhardwaj, S., Jungtae Kwon, Kim, D., Nagoga, M., Yong-Taik Kim, Seon-Yong Cha, Seung-Chan Moon, Sung-Woong Chung, Sung-Joo Hong, Sung-Wook Park
Zdroj: 2009 Symposium on VLSI Technology; 2009, p234-235, 2p
Databáze: Complementary Index