Nitridation of the 4H-SiC/Oxide interface via NO anneal and plasma injection.
| Autor: | Xingguang Zhu, Hang Dong Lee, Tian Feng, Rozen, J., Ahyi, A.C., Zengjun Chen, Minyu Li, Issac-Smith, T., Williams, J.R., Gustafsson, T., Feldman, L.C. |
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| Zdroj: | 2009 International Semiconductor Device Research Symposium; 2009, p1-2, 2p |
| Databáze: | Complementary Index |
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