Si nanowire MOSFET with gate-all-around electrode.
| Autor: | Ndoye, C., Liu, T., Meeham, K., Orlowski, M., Gu, D., Tran, N.H., Baumgart, H. |
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| Zdroj: | 2009 International Semiconductor Device Research Symposium; 2009, p1-3, 3p |
| Databáze: | Complementary Index |
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