TCAD Analysis of a Vertical RF Power Transistor.

Autor: Cai, W.Z., Gogoi, B., Davies, R., Lutz, D., Rice, D., Loechelt, G.H., Grivna, G.
Zdroj: 2009 International Conference on Simulation of Semiconductor Processes & Devices; 2009, p1-4, 4p
Databáze: Complementary Index