Capacitance variation under electrical stress of SiOCH low-k dielectrics for the advanced 45nm technology node and beyond.

Autor: Vilmay, M., Roy, D., Blonkowski, S., Volpi, F., Chaix, J.-M.
Zdroj: 2009 IEEE International Integrated Reliability Workshop Final Report; 2009, p106-110, 5p
Databáze: Complementary Index