Capacitance variation under electrical stress of SiOCH low-k dielectrics for the advanced 45nm technology node and beyond.
Autor: | Vilmay, M., Roy, D., Blonkowski, S., Volpi, F., Chaix, J.-M. |
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Zdroj: | 2009 IEEE International Integrated Reliability Workshop Final Report; 2009, p106-110, 5p |
Databáze: | Complementary Index |
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