Passivation of highly boron doped silicon surfaces by sputtered AlOx and PECVD SiN, a comparison.
Autor: | Li, T.A., Cuevas, A., Tan, J., Samundsett, C., Saynova, D., Geerligs, B. |
---|---|
Zdroj: | 2010 Conference on Optoelectronic & Microelectronic Materials & Devices (COMMAD); 2010, p125-126, 2p |
Databáze: | Complementary Index |
Externí odkaz: |