Passivation of highly boron doped silicon surfaces by sputtered AlOx and PECVD SiN, a comparison.

Autor: Li, T.A., Cuevas, A., Tan, J., Samundsett, C., Saynova, D., Geerligs, B.
Zdroj: 2010 Conference on Optoelectronic & Microelectronic Materials & Devices (COMMAD); 2010, p125-126, 2p
Databáze: Complementary Index