Comparing RF linearity of npn and pnp SiGe HBTs.

Autor: Seth, S., Peng Cheng, Grens, C.M., Cressler, J.D., Babcock, J., Yun Liu, Jonggook Kim, Buchholz, A.
Zdroj: 2009 IEEE Bipolar/BiCMOS Circuits & Technology Meeting; 2009, p29-32, 4p
Databáze: Complementary Index