Estimation of overheating of p-n junction and its effect on degradation of silicon high-power pulse impatt diodes.
Autor: | Belyaev, A.E., Basanets, V.V., Boltovets, N.S., Zorenko, A.V., Konakova, R.V., Kolesnik, N.V., Kudryk, Y.Y., Milenin, V.V., Ataubaeva, A.B. |
---|---|
Zdroj: | Microwave & Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference; 2010, p171-173, 3p |
Databáze: | Complementary Index |
Externí odkaz: |