Detection of high power THz radiation by GaAs High Electron Mobility and Si Field Effect Transistors.
Autor: | Drexler, C., Dyakonova, N., Schafberger, M., Karpierz, K., Karch, J., Videlier, H., Meziani, Y., Olbrich, P., Knap, W., Ganichev, S. |
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Zdroj: | 2010 35th International Conference on Infrared Millimeter & Terahertz Waves (IRMMW-THz); 2010, p1-2, 2p |
Databáze: | Complementary Index |
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