Detection of high power THz radiation by GaAs High Electron Mobility and Si Field Effect Transistors.

Autor: Drexler, C., Dyakonova, N., Schafberger, M., Karpierz, K., Karch, J., Videlier, H., Meziani, Y., Olbrich, P., Knap, W., Ganichev, S.
Zdroj: 2010 35th International Conference on Infrared Millimeter & Terahertz Waves (IRMMW-THz); 2010, p1-2, 2p
Databáze: Complementary Index