Backscattering coefficient in gate-all-around 3C-SiC nanowire FETs.
| Autor: | Rogdakis, K., Bano, E., Pala, M.G., Poli, S., Zekentes, K. |
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| Zdroj: | 2009 9th IEEE Conference on Nanotechnology (IEEE-NANO); 2009, p504-507, 4p |
| Databáze: | Complementary Index |
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