Negative temperature coefficient of breakdown voltage in the Au-Ti-n-n+ 6h SiC Schottky-barrier diodes.

Autor: Belyaev, A.E., Boltovets, N.S., Konakova, R.V., Krivutsa, V.A., Kudryk, Ya.Ya., Lebedev, A.A., Milenin, V.V.
Zdroj: 2009 19th International Crimean Conference Microwave & Telecommunication Technology; 2009, p537-539, 3p
Databáze: Complementary Index