On implementation of embedded phosphorus-doped SiC stressors in SOI nMOSFETs.
| Autor: | Zhibin Ren, Pei, G., Li, J., Yang, B.F., Takalkar, R., Chan, K., Xia, G., Zhu, Z., Madan, A., Pinto, T., Adam, T., Miller, J., Dube, A., Black, L., Weijtmans, J.W., Yang, B., Harley, E., Chakravarti, A., Kanarsky, T., Pal, R. |
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| Zdroj: | 2008 Symposium on VLSI Technology; 2008, p172-173, 2p |
| Databáze: | Complementary Index |
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