A Novel impact Ionization MOS (I-MOS) structure using a silicon-germanium/silicon heterostructure channel.
| Autor: | Nematian, H., Fathipour, M., Nayeri, M. |
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| Zdroj: | 2008 International Conference on Microelectronics; 2008, p228-231, 4p |
| Databáze: | Complementary Index |
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