Effects of HfO2 trapping layer in Gd2O3 nanocrystal nonvolatile memory with multi-tunneling layers.
| Autor: | Chia-Hsin Chen, Chin-Hsiang Liao, Chih-Ting Lin, Jer-Chyi Wang, Po-Wei Huang, Chao-Sung Lai |
|---|---|
| Zdroj: | 2011 International Conference of Electron Devices & Solid-State Circuits (EDSSC); 2011, p1-3, 3p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|