SEGR study on Power MOSFETs: Multiple impacts assumption.

Autor: Peyre, D., Binois, C., Mangeret, R., Salvaterra, G., Beaumel, M., Pontoni, F., Bouchet, T., Pater, L., Bezerra, F., Ecoffet, R., Lorfevre, E., Sturesson, F., Poivey, C., Berger, G., Foy, J.C., Piquet, B.
Zdroj: 2007 9th European Conference on Radiation & Its Effects on Components & Systems; 2007, p1-8, 8p
Databáze: Complementary Index