SEGR study on Power MOSFETs: Multiple impacts assumption.
Autor: | Peyre, D., Binois, C., Mangeret, R., Salvaterra, G., Beaumel, M., Pontoni, F., Bouchet, T., Pater, L., Bezerra, F., Ecoffet, R., Lorfevre, E., Sturesson, F., Poivey, C., Berger, G., Foy, J.C., Piquet, B. |
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Zdroj: | 2007 9th European Conference on Radiation & Its Effects on Components & Systems; 2007, p1-8, 8p |
Databáze: | Complementary Index |
Externí odkaz: |