HfSiON Gate Dielectric for 45nm Node Low-Power Device.

Autor: Tian-Choy Gan, Wang, H.C.-H., Shang-Jr Chen, Ching-Wei Tsai, Peng-Soon Lim, Huan-Just Lin, Ying Jin, Hun-Jan Tao, Shih-Chang Chen, Ying Keung Leung, Diaz, C.H., Mong-Song Liang, Yuh-Jier Mii
Zdroj: 2006 International Symposium on VLSI Technology, Systems & Applications; 2006, p1-2, 2p
Databáze: Complementary Index