HfSiON Gate Dielectric for 45nm Node Low-Power Device.
Autor: | Tian-Choy Gan, Wang, H.C.-H., Shang-Jr Chen, Ching-Wei Tsai, Peng-Soon Lim, Huan-Just Lin, Ying Jin, Hun-Jan Tao, Shih-Chang Chen, Ying Keung Leung, Diaz, C.H., Mong-Song Liang, Yuh-Jier Mii |
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Zdroj: | 2006 International Symposium on VLSI Technology, Systems & Applications; 2006, p1-2, 2p |
Databáze: | Complementary Index |
Externí odkaz: |