Spatial Probing of Traps in nMOSFET with ALD HfO2/SiO2 Stacks Using Low Frequency Noise Characteristics.
| Autor: | Xiong, H.D., Suehle, J.S. |
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| Zdroj: | 2006 IEEE International Integrated Reliability Workshop Final Report; 2006, p111-115, 5p |
| Databáze: | Complementary Index |
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