Gate-all-around silicon nanowire MOSFETs and circuits.
| Autor: | Sleight, J.W., Bangsaruntip, S., Majumdar, A., Cohen, G.M., Zhang, Y., Engelmann, S.U., Fuller, N.C.M., Gignac, L.M., Mittal, S., Newbury, J.S., Frank, M.M., Chang, J., Guillorn, M. |
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| Zdroj: | 2010 Device Research Conference (DRC); 2010, p269-272, 4p |
| Databáze: | Complementary Index |
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