Recent progress in GaN FETs on silicon substrate for switching and RF power applications.
Autor: | Miyamoto, H., Shimawaki, H. |
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Zdroj: | 2010 Device Research Conference (DRC); 2010, p187-190, 4p |
Databáze: | Complementary Index |
Externí odkaz: |
Autor: | Miyamoto, H., Shimawaki, H. |
---|---|
Zdroj: | 2010 Device Research Conference (DRC); 2010, p187-190, 4p |
Databáze: | Complementary Index |
Externí odkaz: |