Analysis of free-carrier charges distribution in the n-GaAs monocrystals used at formation of the high-resistance material for the ionizing radiation sensors.
| Autor: | Budnitsky, D.L., Koretskaya, O.B., Novikov, V.A., Tolbanov, O.P. |
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| Zdroj: | 2005 Siberian Conference on Control & Communications; 2005, p80-84, 5p |
| Databáze: | Complementary Index |
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