Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels.

Autor: Meneghesso, G., Levada, S., Zanoni, E., Salviati, G., Armani, N., Rossi, F., Pavesi, M., Manfredi, M., Cavallini, A., Castaldini, A., Du, S., Eliashevich, I.
Zdroj: Proceedings of the 2004 IEEE International Reliability Physics Symposium; 2004, p474-478, 5p
Databáze: Complementary Index