Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels.
Autor: | Meneghesso, G., Levada, S., Zanoni, E., Salviati, G., Armani, N., Rossi, F., Pavesi, M., Manfredi, M., Cavallini, A., Castaldini, A., Du, S., Eliashevich, I. |
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Zdroj: | Proceedings of the 2004 IEEE International Reliability Physics Symposium; 2004, p474-478, 5p |
Databáze: | Complementary Index |
Externí odkaz: |