Investigation of circuit-level oxide degradation and its effect on CMOS inverter operation and MOSFET characteristics.

Autor: Cheek, B.J., Stutzke, N., Kumar, S., Baker, R.J., Moll, A.J., Knowlton, W.B.
Zdroj: Proceedings of the 2004 IEEE International Reliability Physics Symposium; 2004, p110-116, 7p
Databáze: Complementary Index