Investigation of circuit-level oxide degradation and its effect on CMOS inverter operation and MOSFET characteristics.
Autor: | Cheek, B.J., Stutzke, N., Kumar, S., Baker, R.J., Moll, A.J., Knowlton, W.B. |
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Zdroj: | Proceedings of the 2004 IEEE International Reliability Physics Symposium; 2004, p110-116, 7p |
Databáze: | Complementary Index |
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