Thermally robust Ta-doped Ni SALICIDE process promising for sub-50 nm CMOSFETs.
| Autor: | Sun, M.C., Kim, M.J., Ku, J.-H., Roh, K.J., Kim, C.S., Youn, S.P., Jung, S.-W., Choi, S., Lee, N.I., Kang, H.-K., Suh, K.P. |
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| Zdroj: | 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407); 2003, p81-82, 2p |
| Databáze: | Complementary Index |
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