Ultra low power 6T-SRAM chip with improved transistor performance and reliability by HfO2-Al2O3 high-K gate dielectric process optimization.
| Autor: | Chang-Bong Oh, Hyuk-Ju Ryu, Hee-Sung Kang, Myoung-Hwan Oh, Jong-Ho Lee, Nae-In Lee, Hyun-Woo Lee, Cheol-Hee Jun, Young-Wug Kim, Kwang-Pyuk Suh |
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| Zdroj: | 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407); 2003, p71-72, 2p |
| Databáze: | Complementary Index |
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