Theoretical and experimental investigation of Si nanocrystal memory device with HfO2 high-k tunneling dielectric.
| Autor: | Lee, J.J., Wang, X., Bai, W., Lu, N., Liu, J., Kwong, D.L. |
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| Zdroj: | 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407); 2003, p33-34, 2p |
| Databáze: | Complementary Index |
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