Properties of GaAs/Si heterostructure material fabricated by low temperature wafer bonding using a spin-on-glass intermediate layer.

Autor: Deligeorgis, G., Gallis, S., Androulidaki, M., Cengher, D., Hatzopoulos, Z., Alexe, M., Dragoi, V., Kyriakis-Bitzaros, E.D., Halkias, G., Peiro, F., Georgakilas, A.
Zdroj: 12th International Conference on Semiconducting & Insulating Materials, 2002. SIMC-XII-2002; 2002, p125-128, 4p
Databáze: Complementary Index