Theoretical approach and precise description of PBTI in high-k gate dielectrics based on electron trap in pre-existing and stress-induced defects.
| Autor: | Shimokawa, J., Sato, M., Suzuki, C., Nakamura, M., Ohji, Y. |
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| Zdroj: | 2009 IEEE International Reliability Physics Symposium; 2009, p973-976, 4p |
| Databáze: | Complementary Index |
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