Wafer bevel shape inducing high defect density in shallow trench isolation process.
| Autor: | Dureuil, V., Baltzinger, J., Tastets, K., Vallier, L., Wlodarczyk, N., Bernaud, O., Leroueille, J., Mouroux, C. |
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| Zdroj: | Advanced Semiconductor Manufacturing Conference (ASMC), 2010 IEEE/SEMI; 2010, p213-216, 4p |
| Databáze: | Complementary Index |
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