Influence of InGaN/GaN/Si electroluminescent heterostructure design and quantum well thickness on their luminescent and laser properties.
| Autor: | Pavlovskii, V.N., Lutsenko, E.V., Danilchyk, A.V., Zubialevich, V.Z., Muravitskaya, A.V., Yablonskii, G.P., Kalisch, H., Jansen, R.H., Schineller, B., Heuken, M. |
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| Zdroj: | International Conference on Advanced Optoelectronics & Lasers (CAOL), 2010; 2010, p265-267, 3p |
| Databáze: | Complementary Index |
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