Numerical investigation of excess RF channel noise in sub-100 nm MOSFETs.
Autor: | Mahajan, V.M., Jindal, R.P., Shichijo, H., Martin, S., Fan-Chi Hou, Trombley, D. |
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Zdroj: | 2009 2nd International Workshop on Electron Devices & Semiconductor Technology; 2009, p1-4, 4p |
Databáze: | Complementary Index |
Externí odkaz: |