Numerical investigation of excess RF channel noise in sub-100 nm MOSFETs.

Autor: Mahajan, V.M., Jindal, R.P., Shichijo, H., Martin, S., Fan-Chi Hou, Trombley, D.
Zdroj: 2009 2nd International Workshop on Electron Devices & Semiconductor Technology; 2009, p1-4, 4p
Databáze: Complementary Index