5.5 V zero-channel power MOSFETs with Ron,sp of 1.0 mΩ·mm2 for portable power management applications.

Autor: Huang, W., Zhu, R., Khemka, V., Khan, T., Fu, Y., Cheng, X., Hui, P., Ger, M.L., Rodriquez, P.
Zdroj: 2009 21st International Symposium on Power Semiconductor Devices & IC's; 2009, p319-322, 4p
Databáze: Complementary Index