Improving electrical properties of pure nickel silicide by employing spike anneal as the second rapid thermal anneal.
| Autor: | Futase, T., Hashikawa, N., Kamino, T., Inaba, Y., Fujiwara, T., Suzuki, T., Yamamoto, H. |
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| Zdroj: | 2009 IEEE/SEMI Advanced Semiconductor Manufacturing Conference; 2009, p245-249, 5p |
| Databáze: | Complementary Index |
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