Spatial characterization of hot carriers injected into the gate dielectric stack of a MOSFET based non-volatile memory device.
Autor: | Shappir, A., Levy, D., Geva, G., Shacham-Diamand, Y., Lusky, E., Bloom, I., Eitan, B. |
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Zdroj: | 22nd Convention on Electrical & Electronics Engineers in Israel, 2002; 2002, p58-60, 3p |
Databáze: | Complementary Index |
Externí odkaz: |