Spatial characterization of hot carriers injected into the gate dielectric stack of a MOSFET based non-volatile memory device.

Autor: Shappir, A., Levy, D., Geva, G., Shacham-Diamand, Y., Lusky, E., Bloom, I., Eitan, B.
Zdroj: 22nd Convention on Electrical & Electronics Engineers in Israel, 2002; 2002, p58-60, 3p
Databáze: Complementary Index