Highly-performant 38 nm SON (silicon-on-nothing) P-MOSFETs with 9 nm-thick channels.
| Autor: | Monfray, S., Skotnicki, T., Morand, Y., Descombes, S., Talbot, A., Dutartre, D., Leverd, F., Le Friec, Y., Palla, R., Pantel, R., Haond, M., Nier, M.-E., Vizioz, C., Louis, D. |
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| Zdroj: | IEEE International 2002 SOI Conference; 2002, p20-22, 3p |
| Databáze: | Complementary Index |
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