Degraded blocking performance of 4H-SiC rectifiers under high dV/dt conditions.

Autor: Losee, P.A., Zhu, L., Chow, T.P., Bhat, I.B., Gutmann, R.J.
Zdroj: Proceedings ISPSD '05. the 17th International Symposium on Power Semiconductor Devices & ICs, 2005; 2005, p219-222, 4p
Databáze: Complementary Index