SiGe hetero FETs on silicon at cryogenic temperature.

Autor: Aniel, F., Enciso-Aguilar, M., Zerounian, N., Giguerre, L., Crozat, P., Adde, R., Zeuner, M., Hock, G., Hackbarth, T., Herzog, H.-J., Konig, U.
Zdroj: Proceedings of the 5th European Workshop on Low Temperature Electronics; 2002, p3-10, 8p
Databáze: Complementary Index