24 mΩcm2 680 V silicon superjunction MOSFET.

Autor: Onishi, Y., Iwamoto, S., Sato, T., Nagaoka, T., Ueno, K., Fujihira, T.
Zdroj: Proceedings of the 14th International Symposium on Power Semiconductor Devices & Ics; 2002, p241-244, 4p
Databáze: Complementary Index