24 mΩcm2 680 V silicon superjunction MOSFET.
Autor: | Onishi, Y., Iwamoto, S., Sato, T., Nagaoka, T., Ueno, K., Fujihira, T. |
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Zdroj: | Proceedings of the 14th International Symposium on Power Semiconductor Devices & Ics; 2002, p241-244, 4p |
Databáze: | Complementary Index |
Externí odkaz: |