Large area 4H-SiC power MOSFETs.
| Autor: | Agarwal, A., Sei-Hyung Ryu, Das, M., Lipkin, L., Palmour, J., Saks, N. |
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| Zdroj: | Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216); 2001, p183-186, 4p |
| Databáze: | Complementary Index |
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