Optimization of post N2 treatment & USG cap layer to improve tungsten peeling defects for deep sub-micron device yield improvement.

Autor: Cheng, Y.L., Wang, Y.L., Wu, S.A., Wang, H.L., Wang, J.K.
Zdroj: Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130); 2000, p438-441, 4p
Databáze: Complementary Index