Optimization of post N2 treatment & USG cap layer to improve tungsten peeling defects for deep sub-micron device yield improvement.
Autor: | Cheng, Y.L., Wang, Y.L., Wu, S.A., Wang, H.L., Wang, J.K. |
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Zdroj: | Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130); 2000, p438-441, 4p |
Databáze: | Complementary Index |
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