Influence of the design parameters on the performance of 1.7 kV, NPT, planar clustered insulated gate bipolar transistor (CIGBT).
Autor: | Vershinin, K., Sweet, M., Spulber, O., Hardikar, S., Luther-King, N., De Souza, M.M., Sverdloff, S., Narayanan, E.M.S. |
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Zdroj: | Proceedings ISPSD '04. the 16th International Symposium on Power Semiconductor Devices & ICs, 2004; 2004, p269-272, 4p |
Databáze: | Complementary Index |
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