A study of interface charges on the operation of 4H silicon carbide (SiC) static induction transistors (SITs).
Autor: | Fuerherm, J., Yu Anne Zeng, White, M.H. |
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Zdroj: | International Semiconductor Device Research Symposium, 2003; 2003, p134-135, 2p |
Databáze: | Complementary Index |
Externí odkaz: |