Monte Carlo simulation of consecutive implants into SiO2 capped Si.
Autor: | Di Li, Shyh-Horng Yang, Machala, C., Li Lin, Tasch, Al.F., Hornung, B., Li-Fatou, A., Banerjee, S.K. |
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Zdroj: | International Conference on Simulation of Semiconductor Processes & Devices; 2002, p217-220, 4p |
Databáze: | Complementary Index |
Externí odkaz: |