Monte Carlo simulation of consecutive implants into SiO2 capped Si.

Autor: Di Li, Shyh-Horng Yang, Machala, C., Li Lin, Tasch, Al.F., Hornung, B., Li-Fatou, A., Banerjee, S.K.
Zdroj: International Conference on Simulation of Semiconductor Processes & Devices; 2002, p217-220, 4p
Databáze: Complementary Index