Fabrication of 0.1μm-gate InP HEMTs using i-line lithography.

Autor: Sawada, K., Makiyama, K., Takahashi, T., Nozaki, K., Igarashi, M., Kon, J., Hara, N.
Zdroj: International Conference on Indium Phosphide & Related Materials, 2003; 2003, p65-68, 4p
Databáze: Complementary Index