Ab-initio calculations to predict stress effects on defects and diffusion in silicon.
| Autor: | Diebel, M., Dunham, S.T. |
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| Zdroj: | International Conference on Simulation of Semiconductor Processes & Devices, 2003. SISPAD 2003; 2003, p147-150, 4p |
| Databáze: | Complementary Index |
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