Design and fabrication of high accuracy GaAs Hall effect sensor grown by molecular beam epitaxy.

Autor: Mohades-Kassai, A., Soufi, H.R.
Zdroj: ICM 2000. Proceedings of the 12th International Conference on Microelectronics. (IEEE Cat. No.00EX453); 2000, p345-348, 4p
Databáze: Complementary Index