Design and fabrication of high accuracy GaAs Hall effect sensor grown by molecular beam epitaxy.
Autor: | Mohades-Kassai, A., Soufi, H.R. |
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Zdroj: | ICM 2000. Proceedings of the 12th International Conference on Microelectronics. (IEEE Cat. No.00EX453); 2000, p345-348, 4p |
Databáze: | Complementary Index |
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